Repeatable asymmetric resonant tunneling in AlGaN/GaN double barrier structures grown on sapphire-Reference-Cited by-同舟云学术

Repeatable asymmetric resonant tunneling in AlGaN/GaN double barrier structures grown on sapphire

Published:2019-02-18 Issue:7 Volume:114 Page:073503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang D.¹²³^ORCID,Chen Z. Y.²,Wang T.²⁴,Yang L. Y.²,Sheng B. W.²,Liu H. P.²,Su J.³,Wang P.²,Rong X.²^ORCID,Cheng J. Y.²,Shi X. Y.³,Tan W.³,Guo S. P.⁵^ORCID,Zhang J.³,Ge W. K.²,Shen B.²⁶,Wang X. Q.²⁶^ORCID

Affiliation:

1. Department of Engineering Physics, Tsinghua University, Beijing 100084, China

2. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

3. Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China

4. Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China

5. Advanced Micro-Fabrication Equipment Inc., Shanghai 201201, China

6. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

NSAF

Science Challenge Project

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5080470

Reference40 articles.

1. At the Dawn of a New Era in Terahertz Technology

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5. Resonant-tunnelling-diode oscillators operating at frequencies above 1.1 THz

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