ANNEALING OF IMPLANTED LAYERS IN COMPOUND SEMICONDUCTORS BY LOCALIZED BEAM HEATING TECHNIQUES-Reference-Cited by-同舟云学术

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ANNEALING OF IMPLANTED LAYERS IN COMPOUND SEMICONDUCTORS BY LOCALIZED BEAM HEATING TECHNIQUES

Published:1980 Issue: Volume: Page:334-340
ISSN:
Container-title:Laser and Electron Beam Processing of Materials
language:
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Author:

Lawrence Anderson C.,Dunlap H.L.,Hess L.D.,Olson G.L.,Vaidyanathan K.V.

Publisher

Elsevier

Reference8 articles.

1. C. Fan, J. P. Donnelly, C. O. Bozler and R. L. Chapman, Inst. Phys. Conf. Ser. No. 45: ch. 6, 427, (1978).

2. L. Anderson, H. L. Dunlap, L. D. Hess and K. V. Vaidyanathan, AIP Conf. Proc. 50, 585(1979).

3. L. Tandon and F. H. Eisen, AIP Conf. Proc. 50, 616(1979).

4. Pulsed electron‐beam annealing of selenium‐implanted gallium arsenide

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