Rapid Annealing of GaAs and Related Compounds-Reference-Cited by-同舟云学术

Rapid Annealing of GaAs and Related Compounds

Published:1984 Issue: Volume:35 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Williams J.S.,Pearton S.J.

Abstract

ABSTRACTIn recent years, rapid annealing of GaAs has been employed to activate ion implanted dopants and to produce metal-semiconductor contacts. More recently, rapid heating techniques have been used to anneal heterostructures without degrading requisite high mobilities of SDHT devices. This paper reviews the various annealing regimes which are useful for heat treating GaAs and related compounds. Examples are chosen which illustrate unique and potentially useful features of rapid annealing.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference60 articles.

1. The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE

2. 59 Orrmon K.G. -Rossiter, Johnson S.T. and Williams J.S. , Nucl. Instr. Methods (in press).

3. 58 Pearton S.J. , Boerma D.O. , Poate J.M. , Williams J.S. , Johnson S.T. and Orrman-Rossiter K.G. , unpublished.

4. 56 Soloman J. and Smith S. , private communication

5. 54 Fan J.C.C. , this symposium.

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