Chapter 8 Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors-Reference-Cited by-同舟云学术

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Chapter 8 Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors

Published:1997 Issue: Volume: Page:257-293
ISSN:0080-8784
Container-title:Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization
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Author:

Myasnikov Alexandre M.,Gerasimenko Nikolay N.

Publisher

Elsevier

Reference53 articles.

1. Photoelectical Properties of Indium Arsenide Implanted with S and Mg at 350 keV Energy;Akimchenko;Sov. Phys. Semiconductors,1979

2. Spectra of Photoelectical Force of InAs Implanted with Cd ions;Akimchenko;Kratkie Soobshcheniya Fizike,1980

3. A Channeling Study on Mg Implanted InSb Single Crystals;Alberts;Materials Res. Soc. Symp. Proc.,1984

4. Planar Diodes on InAs Material;Astakhov;Pis'ma Zhurnal Tekhnicheskoy Fiziki,1992

5. Semiconductor Electronics. Handbook on Properties of Materials.;Baransky,1975

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