A Channeling Study on Mg Implanted InSb Single Crystals

Abstract

ABSTRACTProton and α-particle channeling were used to study the radiation damage caused by the implantation of 160 keV Mg ions in InSb. The implantations took place at various substrate temperatures ranging from room temperature to temperatures just below the melting point and doses ranging from 5.1013 to 1.1016 Mg+ cm−2. The isochronal annealing of the room temperature implanted crystals started at 200°C and damage could not be completely removed even at temperatures just below the melting point. For crystals implanted at elevated substrate temperatures no annealing effects during implantation occured up to 400°C. Above 400°C a sharp reduction of damage indicates that the rate of formation of more complex defect configurations during the implantation process becomes smaller than the annihilation rate of the vacancy-interstitial pairs. A non-linear dependence exists between the degree of radiation damage in the InSb lattice and the implanted dose.