Dose rate and orientation dependence of damage induced by Xe and Cd lmplants in InSb-Reference-Cited by-同舟云学术

Dose rate and orientation dependence of damage induced by Xe and Cd lmplants in InSb

Published:1977-01 Issue:4 Volume:33 Page:199-203
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Bahir G.,Kalish R.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577708233106

Reference12 articles.

1. Channelling studies of ion implantation induced lattice defects in zinc telluride

2. Langguth, G., Land, E. and Meyer, O.Proc. of II Int. Conf. of Ion Implantation in Semiconductors, Garmisch, (1971)228Springer-Verlag. p. ().

3. Anderson, J. U. and Uggerh⊘j, E. These implantations were carried out in Aarhus since the ion implantation facilities at the Technion were not ready when the experiment was done. The help of Drs.in that part of the present work is greatly acknowledged.

4. Comparison of Average-Potential Models and Binary-Collision Models of Axial Channeling and Blocking

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1. Lattice sites of ion implanted Li in indium antimonide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03

2. Anomalous damage in n+implanted inas;Radiation Effects and Defects in Solids;1990-04

3. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989

4. Radiation damage in InSb by alpha particle implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-12

5. Radiation damage in InSb single crystals by α-particle bombardment;Nuclear Instruments and Methods in Physics Research;1983-12