Author:
Elliman R.G.,Ridgway M.C.,JOHNSON S.T.,Williams J.S.
Abstract
ABSTRACTThis paper reviews some key areas where MeV ion beams can be applied to III-V semiconductor materials. In particular, ion damage is assessed for various III-V materials in terms of implantation parameters, especially substrate temperature and dose rate. Implant isolation, involving the introduction of damage to remove carriers and achieve highlyresistive layers, is assessed for MeV irradiation. It is concluded that MeV ions can provide deep, uniform damage with a single-energy implant. Finally, improved epitaxy of amorphous InP with MeV ions is demonstrated.
Publisher
Springer Science and Business Media LLC
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