Author:
Pearton S. J.,Jalali B.,Abernathy C. R.,Hobson W. S.,Fox J. D.,Kemper K. W.,Roa D. E.
Subject
General Physics and Astronomy
Cited by
7 articles.
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1. Materials Processing;Ion Beams in Materials Processing and Analysis;2012
2. ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY;International Journal of Modern Physics B;1993-12-30
3. Implant‐damage isolation of InP and InGaAsP;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1993-07
4. Ion implantation in III–V compound semiconductors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
5. Thermally stable, buried high‐resistance layers in p‐type InP obtained by MeV energy Ti implantation;Journal of Applied Physics;1993-06