Layer intermixing in 1 MeV implanted GaAs/AlGaAs superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100743
Reference13 articles.
1. Disorder of an AlAs‐GaAs superlattice by silicon implantation
2. Kinetics of silicon‐induced mixing of AlAs‐GaAs superlattices
3. Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs
4. Defect Structure of MEV Si Implantation in GaAs
5. Defect structure and intermixing of ion‐implanted AlxGa1−xAs/GaAs superlattices
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1. Effect of substrate surface on electromigration-induced sliding at hetero-interfaces;Journal of Physics D: Applied Physics;2013-03-18
2. Annealing effects on electrical characteristics of 100 MeV Si-28 implantation in GaAs;Journal of Materials Science: Materials in Electronics;2000
3. Combined Effects of High-Energy Si, Zn and Ga Ion Implantation and Annealing on the Reduction of Threading Dislocations in GaAs on Si;Japanese Journal of Applied Physics;1995-09-15
4. RBS studies of the lattice damage caused by 1 Me V Si+ implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05
5. Interdiffusion Behavior in Al0.3Ga0.7As/GaAs Superlattices;Physica Status Solidi (a);1993-03-16
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