Combined Effects of High-Energy Si, Zn and Ga Ion Implantation and Annealing on the Reduction of Threading Dislocations in GaAs on Si
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Published:1995-09-15
Issue:Part 2, No. 9B
Volume:34
Page:L1194-L1197
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Tamura Masao,Saitoh Tohru
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering