Author:
Narsale A. M.,Damle A. R.,Ali Yousuf P.,Kanjilal D.,Arora B. M.,Shah A. P.,Lokhre S. G.,Salvi V. P.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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1. Photoluminescence study of GaAs implanted with 100MeV 28Si ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-06
2. Electrical characteristics of high-energy implantation in n+GaAs;Radiation Measurements;2003-06