Author:
Thompson Phillip E.,Wilson Robert G.,Ingram David C.,Pronko Peter P.
Subject
General Physics and Astronomy
Cited by
11 articles.
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1. The effect of stoichiometric disturbance on activation of MeV Si implantation in GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-05
2. A structure in semi-insulating GaAs substrate by high energy implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-05
3. ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY;International Journal of Modern Physics B;1993-12-30
4. High-energy (MeV) ion implantation and its device applications in GaAs and InP;IEEE Transactions on Electron Devices;1993-06
5. Isolation properties and experimental ranges of high energy ions in GaAs and InP;Journal of Applied Physics;1992-03-15