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Ion-implanted GaAs slow wave monolithic structure

  • Published:1987-05 Issue:5 Volume:30 Page:497-502
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Krowne Clifford M.,Thompson Phillip E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2D-ACAR Studies on Swift Heavy Ion Si-Implanted GaAs;Physics Procedia;2012

2. Near-infrared transmission characteristics of GaAs implanted with high energy (100 Mev) 28Si ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-06

3. Optical and electrical characteristics of GaAs implanted with high energy (70MeV) 120Sn ions;Vacuum;1997-12

4. Electrical properties of high energy 120Sn implantation in GaAs;Journal of Applied Physics;1997-11

5. Electrical characteristics of GaAs implanted with 70 MeV 120Sn ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-08
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