Author:
Damle A.R.,Narsale A.M.,Ali Yousuf P.,Arora B.M.,Gokhale M.R.,Kanjilal D.,Salvi V.P.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
5 articles.
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1. Photoluminescence study of GaAs implanted with 100MeV 28Si ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-06
2. Distribution of radiation induced defects and modification of optical constants of GaAs implanted with high energy 56Fe ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-11
3. Dose dependence and annealing behaviour of radiation-induced defects in implanted GaAs;Radiation Measurements;2003-06
4. MeV energy Lithium ion irradiated crystalline GaAs: an optical study;Radiation Measurements;2003-06
5. High resolution XRD study of GaAs implanted with 50 MeV 120Sn ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-12