MeV energy Lithium ion irradiated crystalline GaAs: an optical study-Reference-Cited by-同舟云学术

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MeV energy Lithium ion irradiated crystalline GaAs: an optical study

Published:2003-06 Issue:1-6 Volume:36 Page:647-652
ISSN:1350-4487
Container-title:Radiation Measurements
language:en
Short-container-title:Radiation Measurements

Author:

Malik J.,Bhatia K.L.,Kishore N.,Kabiraj D.,Maan A.S.

Publisher

Elsevier BV

Subject

Instrumentation,Radiation

Reference12 articles.

1. Semiconductor and Semimetals 21, Part B;Amer,1984

2. Defect production and annealing due to high energy ion implantation;Belykh;Nucl. Instrum. Methods B,1990

3. Optical absorption spectra of amorphous ambipolar semiconductors (Pbs)x)GeS)0.7−x(GeS2)0.3;Bhatia;Solid State Commun.,1988

4. Optical study of MeV energy heavy ion-induced effects in crystalline germanium and silicon;Bhatia;Nucl. Instrum. Methods B,1994

5. Effects of ion-beam induced disorder on interband transitions in Si and GaAs;Bhatia;Radiat. Effects Defects Solids,1994

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