Effect of ion-beam induced disorder on optical interband transitions in Si and GaAs-Reference-Cited by-同舟云学术

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Effect of ion-beam induced disorder on optical interband transitions in Si and GaAs

Published:1994-05 Issue:4 Volume:128 Page:341-355
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Bhatia K. L.,Wilbertz Ch.,Derst G.,Kalbitzer S.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420159408221056

Reference25 articles.

1. The crystalline-to-amorphous transition in ion-bombarded silicon

2. Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductors

3. Disorder effects on optical spectra and band structure of Si induced by ion implantation

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MeV energy Lithium ion irradiated crystalline GaAs: an optical study;Radiation Measurements;2003-06

2. a-Gallium Arsenide (a-GaAs);Optical Constants of Crystalline and Amorphous Semiconductors;1999

3. Surface morphology and optical properties of MeV-energy heavy-ion irradiated crystalline Si and crystalline Ge: Possibility of formation of porous material;Philosophical Magazine B;1996-12

4. Optical study of MeV energy heavy ion-induced effects in crystalline germanium and silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-12

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