Pulsed electron‐beam annealing of selenium‐implanted gallium arsenide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91210
Reference13 articles.
1. Laser annealing of boron‐implanted silicon
2. Laser reordering of implanted amorphous layers in GaAs
3. Silicon solar cells by high-speed low-temperature processing
4. p‐njunction formation in boron‐deposited silicon by laser‐induced diffusion
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