Fundamental limits for near-junction conduction cooling of high power GaN-on-diamond devices-Reference-Cited by-同舟云学术

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Fundamental limits for near-junction conduction cooling of high power GaN-on-diamond devices

Published:2019-06 Issue: Volume:295 Page:12-15
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Song Changhwan,Kim Jihyun,Lee Hyoungsoon,Cho Jungwan

Funder

Institute of Information & Communications Technology Planning & Evaluation

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference27 articles.

1. Fundamental Cooling Limits for High Power Density Gallium Nitride Electronics

2. Near-Junction Microfluidic Cooling for Wide Bandgap Devices

3. GaN HEMT reliability

4. AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors;Journal of Applied Physics;2024-07-23

2. Two-temperature principle for evaluating electrothermal performance of GaN HEMTs;Applied Physics Letters;2024-01-22

3. Comparison of Different Cooling Schemes for AlGaN/GaN High-Electron Mobility Transistors;Micromachines;2023-12-23

4. High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C‐SiC/Diamond Junctions for Practical Device Processes;Small;2023-11-14

5. Modeling and analyzing near-junction thermal transport in high-heat-flux GaN devices heterogeneously integrated with diamond;International Communications in Heat and Mass Transfer;2023-04

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