Transition between the 1×1 and surface structures of GaN in the vapor-phase environment-Reference-Cited by-同舟云学术

Transition between the 1×1 and surface structures of GaN in the vapor-phase environment

Published:2000-06 Issue:1-3 Volume:283 Page:217-222
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Munkholm A.,Thompson C.,Stephenson G.B.,Eastman J.A.,Auciello O.,Fini P.,Speck J.S.,DenBaars S.P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes

2. S.P. DenBaars, S. Keller, MOCVD of Group III Nitrides, in: J.I. Pankove, T.D. Moustakas (Eds.), Gallium Nitride I, Academic Press, San Diego, 1998 (Chapter 2).

3. Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN

4. Surface Structure of GaN(0001) in the Chemical Vapor Deposition Environment

5. Observation of growth modes during metal-organic chemical vapor deposition of GaN

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