In situX-ray diffraction during MOCVD of III-nitrides-Reference-Cited by-同舟云学术

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In situX-ray diffraction during MOCVD of III-nitrides

Published:2007-08 Issue:8 Volume:204 Page:2798-2803
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Simbrunner C.,Navarro-Quezada A.,Schmidegg K.,Bonanni A.,Kharchenko A.,Bethke J.,Lischka K.,Sitter H.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Time-resolved x-ray scattering studies of layer-by-layer epitaxial growth

2. Transition between the 1×1 and surface structures of GaN in the vapor-phase environment

3. In situand real-time characterization of metal-organic chemical vapor deposition growth by high resolution x-ray diffraction

4. In-situ and real-time monitoring of MOCVD growth of III-nitrides by simultaneous multi-wavelength-ellipsometry and X-ray-diffraction

5. In situ spectroscopic ellipsometry of MOCVD-grown GaN compounds for on-line composition determination and growth control

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystalline Layer Structures with X-Ray Diffractometry;Springer Handbook of Crystal Growth;2010

2. X-ray diffraction of III-nitrides;Reports on Progress in Physics;2009-02-20

3. In situ monitoring of periodic structures during MOVPE of III-nitrides;Journal of Crystal Growth;2008-04

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