In situ monitoring of periodic structures during MOVPE of III-nitrides-Reference-Cited by-同舟云学术

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In situ monitoring of periodic structures during MOVPE of III-nitrides

Published:2008-04 Issue:7-9 Volume:310 Page:1607-1613
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Simbrunner C.,Kharchenko A.,Navarro-Quezada A.,Wegscheider M.,Quast M.,Li Tian,Bonanni A.,Bethke J.,Lischka K.,Sitter H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Fourier analysis applied on in situ laser reflectometry during III-nitride metal organic chemical vapor deposition growth

2. In situ X-ray diffraction during MOCVD of III-nitrides: An optimized wobbling compensating evaluation algorithm

3. In situand real-time characterization of metal-organic chemical vapor deposition growth by high resolution x-ray diffraction

4. Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping

5. On the effect of periodic Mg distribution in GaN:δ-Mg

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials;Progress in Crystal Growth and Characterization of Materials;2016-06

2. MOCVD of Nitrides;Handbook of Crystal Growth;2015

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