Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals-Reference-Cited by-同舟云学术

Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals

Author:

Perret Edith¹,Highland M. J.¹,Stephenson G. B.¹²,Streiffer S. K.²³,Zapol P.¹,Fuoss P. H.¹,Munkholm A.⁴,Thompson Carol⁵

Affiliation:

1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

2. Photon Sciences Directorate, Argonne National Laboratory, Argonne, Illinois 60439, USA

3. Physical Sciences and Engineering Directorate, Argonne National Laboratory, Argonne, Illinois 60439, USA

4. AIXTRON, Inc., Sunnyvale, California 94089, USA

5. Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA

Funder

Basic Energy Sciences (BES)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference19 articles.

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