Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN-Reference-Cited by-同舟云学术

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Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

Published:2017-12-04 Issue:23 Volume:111 Page:232102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Perret Edith¹²,Xu Dongwei¹^ORCID,Highland M. J.¹,Stephenson G. B.¹,Zapol P.¹,Fuoss P. H.¹,Munkholm A.³,Thompson Carol⁴^ORCID

Affiliation:

1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

2. University of Fribourg, Department of Physics and Fribourg Center for Nanomaterials, Chemin du Musée 3, CH-1700 Fribourg, Switzerland

3. Munkholm Consulting, Mountain View, California 94043, USA

4. Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4993788

Reference17 articles.

1. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

2. Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

3. Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals

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3. Surface morphology of polar, semipolar and nonpolar freestanding GaN after chemical etching;Applied Surface Science;2020-05

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