Effect of Si doping on the strain and defect structure of GaN thin films-Reference-Cited by-同舟云学术

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Effect of Si doping on the strain and defect structure of GaN thin films

Published:1999-12 Issue: Volume:273-274 Page:50-53
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Romano L.T,Van de Walle C.G,Krusor B.S,Lau R,Ho J,Schmidt T,Ager III J.W,Götz W,Kern R.S

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy

2. Strain-related phenomena in GaN thin films

3. Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire

4. Intrinsic and Thermal Stress in Gallium Nitride Epitaxial Films

5. Stress relaxation in Si-doped GaN studied by Raman spectroscopy

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1. Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic MnSe2/In2Se3 heterostructure;Physical Review Applied;2024-06-06

2. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N;physica status solidi (b);2020-04

3. Germanium doping of cubic GaN grown by molecular beam epitaxy;Journal of Applied Physics;2019-03-07

4. Incorporation of germanium for n-type doping of cubic GaN;physica status solidi (b);2017-02-27

5. Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications;Journal of Crystal Growth;2016-12

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