Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N-Reference-Cited by-同舟云学术

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Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N

Published:2020-04 Issue:4 Volume:257 Page:1900532
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Deppe Michael¹^ORCID,Henksmeier Tobias¹,Gerlach Jürgen W.²^ORCID,Reuter Dirk¹,As Donat J.¹^ORCID

Affiliation:

1. Department of PhysicsUniversity of Paderborn Warburger Str. 100 33098 Paderborn Germany

2. Non-thermal Deposition of Films and StructuresLeibniz Institute of Surface Engineering (IOM) Permoserstr. 15 04318 Leipzig Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900532

Reference41 articles.

1. Effect of Si doping on the strain and defect structure of GaN thin films

2. High Si and Ge n-type doping of GaN doping - Limits and impact on stress

3. Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping

4. High germanium doping of GaN films by ammonia molecular beam epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical evidence of many-body effects in the zincblende Al x Ga 1−x N alloy system;Journal of Physics D: Applied Physics;2020-10-16

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