Optical evidence of many-body effects in the zincblende Al x Ga 1−x N alloy system

Abstract

Abstract We present a quantitative description of the change in optical properties of zincblende aluminium-gallium-nitride thin films dependent on the free-carrier concentration due to band filling and renormalization effects. Free-electron concentrations above 1020 cm−3 in GaN are achieved by introducing germanium as a donor. Spectroscopic ellipsometry in the infrared and ultraviolet spectral range yields the dielectric function (DF). The plasmon contribution for the infrared part of the DF allows to determine the free-electron concentration all-optically. Furthermore, by utilizing the Kane model for the band structure of semiconductors near the Γ-point of the Brillouin zone as well as taking into account Burstein-Moss-shift and band-gap renormalization, measured transition energies are efficiently described.