Germanium doping of cubic GaN grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Germanium doping of cubic GaN grown by molecular beam epitaxy

Published:2019-03-07 Issue:9 Volume:125 Page:095703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Deppe M.¹,Gerlach J. W.²^ORCID,Shvarkov S.¹,Rogalla D.³^ORCID,Becker H.-W.³^ORCID,Reuter D.¹,As D. J.¹^ORCID

Affiliation:

1. Department Physik, Universität Paderborn, Warburger Str. 100, 33098 Paderborn, Germany

2. Leibniz-Institut für Oberflächenmodifizierung (IOM) e.V., Permoserstr. 15, 04318 Leipzig, Germany

3. RUBION, Ruhr-Universität Bochum, Universitätsstr. 150, 44801 Bochum, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5066095

Reference31 articles.

1. n- and p-Type Doping of Cubic GaN

2. Photoluminescence of magnesium and silicon doped cubic GaN

3. p and n type doping of cubic GaN on SiC (001)

4. Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates

5. Effect of Si doping on the strain and defect structure of GaN thin films

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function;Journal of Applied Physics;2023-08-17

2. Selective thermal neutron transmutation doping with Gd masks in GaN semiconductors;Solid-State Electronics;2023-01

3. Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation Down to the Nanoscale;ACS Applied Materials & Interfaces;2021-01-15

4. Optical evidence of many-body effects in the zincblende Al x Ga 1−x N alloy system;Journal of Physics D: Applied Physics;2020-10-16

5. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N;physica status solidi (b);2020-04

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