XPS investigation of thin SiOx and SiOxNy overlayers
Author:
Publisher
Elsevier BV
Subject
Inorganic Chemistry,Organic Chemistry,Spectroscopy,Analytical Chemistry
Reference11 articles.
1. Electron spectroscopic analysis of the SiO2/Si system and correlation with metal–oxide–semiconductor device characteristics
2. Film thickness measurements of SiO2 by XPS
3. The nature and distribution of nitrogen in silicon oxynitride grown on silicon in a nitric oxide ambient
4. Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on silicon
5. Insituinvestigation of amorphous silicon‐silicon dioxide interfaces by infrared ellipsometry
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1. Controlling resistive switching behavior in the solution processed SiO2-x device by the insertion of TiO2 nanoparticles;Scientific Reports;2022-05-19
2. Nitric oxide oxidation of a Ta encapsulating Si cage nanocluster superatom (Ta@Si16) deposited on an organic substrate; a Si cage collapse indicator;Physical Chemistry Chemical Physics;2018
3. XPS study of nanoscale SiOxNylayers synthezised by plasma immersion implantation of nitrogen;Journal of Physics: Conference Series;2014-05-15
4. Band-Bending at Buried SiO2/Si Interface as Probed by XPS;ACS Applied Materials & Interfaces;2013-06-17
5. Ultra low energy SIMS depth profiling of sub-1.5nm silicon oxynitride films;Applied Surface Science;2006-07
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