Band-Bending at Buried SiO2/Si Interface as Probed by XPS
Author:
Affiliation:
1. Department of Chemistry, Bilkent University, 06800 Ankara, Turkey
2. Departments of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am401696e
Reference37 articles.
1. Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2. Hybrid Amperometric and Conductometric Chemical Sensor Based on Conducting Polymer Nanojunctions
3. Charge Transport in Self-Assembled Semiconducting Organic Layers: Role of Dynamic and Static Disorder
4. Silicon-Based Low-Dimensional Nanomaterials and Nanodevices
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