MBE growth and characterization of high purity GaAs/AIGaAs on the (110) surface of GaAs
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference12 articles.
1. Quantum wire structures by MBE overgrowth on a cleaved edge;Pfeiffer;J. Crystal Growth,1991
2. Instabilities of (110) III–V compounds grown by molecular beam epitaxy;Wang;J. Vac. Sci. Technol. B,1983
3. Growth and properties of AlGaAs/GaAs heterostructures on GaAs (110) surface;Zhou;J. Crystal Growth,1987
4. Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy;Allen;Appl. Phys. Lett.,1987
5. Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide;Ballingall;Appl. Phys. Lett.,1982
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1. Growth of Si-doped GaAs(110) thin films by molecular beam epitaxy; Si site occupation and the role of arsenic;Journal of Applied Physics;1998-04-15
2. Transport and optics in quantum wires fabricated by MBE overgrowth on the (110) cleaved edge;Microelectronics Journal;1997-10
3. MBE growth of two-dimensional electron gases on (110) GaAs;Journal of Crystal Growth;1997-05
4. (110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T‐shaped quantum wires;Applied Physics Letters;1996-08-05
5. 4.2.5 References for 4.1 and 4.2;Landolt-Börnstein - Group III Condensed Matter
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