Growth of Si-doped GaAs(110) thin films by molecular beam epitaxy; Si site occupation and the role of arsenic
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367169
Reference42 articles.
1. Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide
2. Autocompensation in molecular beam epitaxial gallium arsenide: The (110) orientation
3. Molecular beam epitaxial growth of (Al,Ga)As/GaAs heterostructures and Si doping characterization study on vicinal (110) GaAs substrates
4. Silicon compensation and scattering mechanisms in two-dimensional electron gases on (110)GaAs
5. MBE growth and characterization of high purity GaAs/AIGaAs on the (110) surface of GaAs
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2. Nanosecond recombination lifetimes and spin relaxation times in (110) InGaAs/AlGaAs quantum wells at room temperature;Applied Physics Express;2024-03-01
3. GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates;Crystals;2022-12-24
4. Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature;Micromachines;2021-09-16
5. Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110);Journal of Alloys and Compounds;2021-09
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