Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98329
Reference12 articles.
1. Molecular beam epitaxy
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4. Double‐heterostructure GaAs‐AlxGa1−xAs [110]p‐n‐junction‐diode modulator
5. Interface morphology studies of (110) and (111) Ge‐GaAs grown by molecular beam epitaxy
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