A novel passivation technology of InGaAs surfaces using Si interface control layer and its application to field effect transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference3 articles.
1. On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states
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1. Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition;Scientific Reports;2017-09-12
2. In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric;Solid-State Electronics;2013-06
3. Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As;Applied Surface Science;2011-02
4. The defect density of a SiNx/In0.53Ga0.47As interface passivated using (NH4)2Sx;Applied Physics A;2008-04-12
5. Importance of controlling oxygen incorporation into HfO2∕Si∕n-GaAs gate stacks;Journal of Applied Physics;2007-02
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