Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As-Reference-Cited by-同舟云学术

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Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As

Published:2011-02 Issue:9 Volume:257 Page:4082-4090
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Brennan B.,Milojevic M.,Hinkle C.L.,Aguirre-Tostado F.S.,Hughes G.,Wallace R.M.

Funder

MSD Focus Center

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference75 articles.

1. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

2. http://www.itrs.net/Links/2009ITRS/2009Chapters_2009Tables/2009_ExecSum.pdf, p. 17.

3. High Dielectric Constant Materials – VSLI MOSFET Applications;Huff,2005

4. Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon

5. Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

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