Performance of a Focused-Ion-Beam Implanter with Tilt-Writing Function-Reference-Cited by-同舟云学术

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Performance of a Focused-Ion-Beam Implanter with Tilt-Writing Function

Published:1989-10-20 Issue:Part 1, No. 10 Volume:28 Page:2095-2098
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sawaragi Hiroshi,Manabe Hironobu,Kasahara Haruo,Aihara Ryuso,Nakamura Kazuo,Nihei Fumiyuki,Ochiai Yukinori,Matsui Shinji,Nozaki Tadatoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and electrical characterization of InP-based insulated gate power HEMTS using ultrathin Si interface control layer;Solid-State Electronics;1997-10

2. Si3N4/Si/In0.05Ga0.95As/n–GaAs metal–insulator–semiconductor devices;Journal of Applied Physics;1997-01

3. Association of time instability of the InP - interface characteristics with bulk properties of the insulator;Semiconductor Science and Technology;1996-11-01

4. A novel insulated gate technology for ingaas high electron mobility transistors using silicon interlayer based passivation technique;Journal of Electronic Materials;1996-05

5. A novel passivation technology of InGaAs surfaces using Si interface control layer and its application to field effect transistor;Solid-State Electronics;1995-09

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