Si3N4/Si/In0.05Ga0.95As/n–GaAs metal–insulator–semiconductor devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364130
Reference37 articles.
1. The interaction of stoichiometry, mechanical stress, and interface trap density in LPCVD Si-rich SiNx;Si structures
2. The interaction of stoichiometry, mechanical stress, and interface trap density in LPCVD Si-rich SiNx;Si structures
3. The properties of GaAs-Al2O3 and InP-Al2O3 interfaces and the fabrication of MIS field-effect transistors
4. The properties of GaAs-Al2O3 and InP-Al2O3 interfaces and the fabrication of MIS field-effect transistors
5. Gate‐width dependence of radiation‐induced interface traps in metal/SiO2/Si devices
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-κ dielectrics and advanced channel concepts for Si MOSFET;Journal of Materials Science: Materials in Electronics;2008-05-02
2. Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers;Applied Physics Letters;2006-07-24
3. A model for capacitance reconstruction from measured lossy MOS capacitance voltage characteristics;Semiconductor Science and Technology;2002-12-24
4. Characteristics of Si3N4/GaAs metal-lnsulator-semiconductor interfaces with coherent Si/Al0.3Ga0.7As interlayers;Journal of Electronic Materials;1997-09
5. Minority-carrier characteristics of SiNx/GaAs metal–insulator–semiconductor structures with Si/Ge interlayers;Applied Physics Letters;1997-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3