Controlled nitrogen incorporation at SiSiO2 interfaces and in thin gate dielectrics by remote-plasma-assisted oxidation and deposition processes-Reference-Cited by-同舟云学术

Controlled nitrogen incorporation at SiSiO2 interfaces and in thin gate dielectrics by remote-plasma-assisted oxidation and deposition processes

Published:1995-06 Issue:1-4 Volume:28 Page:117-120
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Lee D.R.,Hattangady S.V.,Niimi H.,Parker C.,Lucovsky G.,Hauser J.R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Advantages of thermal nitride and nitroxide gate films in VLSI process

2. Improved transconductance under high normal field MOSFETs with ultrathin nitrided oxides

3. The use of ultrathin reoxidized nitrided gate oxide for suppression of boron penetration in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs

4. The performance and reliability of 0.4 micron MOSFET's with gate oxynitrides grown by rapid thermal processing using mixtures of N/sub 2/O and O/sub 2/

5. Fixed and trapped charges at oxide–nitride–oxide heterostructure interfaces formed by remote plasma enhanced chemical vapor deposition

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices;Microelectronics Journal;2006-01

2. Electrical reliability of ultra thin remote plasma deposited oxides on silicon;Microelectronic Engineering;1997-06

3. Composition and conduction properties of silicon nitrides deposited by plasma-enhanced ultra-high-vacuum chemical vapour deposition;Philosophical Magazine B;1996-05

4. Preparation of device-quality SiO2 thin films by remote plasma-enhanced chemical vapour deposition (PECVD): Applications in metal-oxide-semiconductor (MOS) devices;Advanced Materials for Optics and Electronics;1996-03

5. Oxynitridation of silicon by remote‐plasma excited nitrogen and oxygen;Applied Physics Letters;1996-02-05