Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference36 articles.
1. SiO2 dielectric breakdown mechanism studied by the post-breakdown resistance statistics;Satake;Semicond. Sci. Technol.,2000
2. Observation and creation of current leak age sites in ultrathin silicon dioxide films using scanning tunneling microscopy;Watanable;App. Phys. Lett.,1998
3. Reliability limits for gate insulator in CMOS technology, IBM;Stathis;J. Res. Dev.,2002
4. High reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma;Sekine;IEEE Trans. Electron Dev.,2001
5. The model of kinetics of constant current plasma anodisation process;Beck;Appl. Surf. Sci.,1988
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