Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121241
Reference15 articles.
1. Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism
2. Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism
3. Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism
4. Metal‐oxide‐semiconductor field‐effect‐transistor substrate current during Fowler–Nordheim tunneling stress and silicon dioxide reliability
5. Investigation of existing defects and defect generation in device-grade SiO[sub 2] by ballistic electron emission spectroscopy
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