Improved transconductance under high normal field MOSFETs with ultrathin nitrided oxides
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/55/1378/00031718.pdf?arnumber=31718
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2. Behavior of Transconductance and Drive Current of Decoupled Plasma Nitridation Oxynitrides;Japanese Journal of Applied Physics;2005-06-10
3. The 1.3–1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 μm and beyond CMOS technology application;Solid-State Electronics;2002-04
4. To optimize electrical properties of the ultrathin (1.6 nm) nitride/oxide gate stacks with bottom oxide materials and post-deposition treatment;IEEE Transactions on Electron Devices;2001
5. Advances in low temperature processing of silicon nitride based dielectrics and their applications in surface passivation and integrated optical devices;Semiconductor Science and Technology;2000-06-23
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