Electrical reliability of ultra thin remote plasma deposited oxides on silicon-Reference-Cited by-同舟云学术

Electrical reliability of ultra thin remote plasma deposited oxides on silicon

Published:1997-06 Issue:1-4 Volume:36 Page:65-67
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ragnarsson L.-Å.,Lundgren P.,Jauhiainen A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Controlled nitrogen incorporation at SiSiO2 interfaces and in thin gate dielectrics by remote-plasma-assisted oxidation and deposition processes

2. Silicon/SiO2 interface formation by remote plasma-enhanced oxidation/deposition process in a cluster tool

3. Proc. MRS fall meeting;Ragnarsson,1996

4. Electrical instability of ultrathin thermal oxides on silicon

5. Enhanced Tunneling through Dielectric Films due to Ionic Defects

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4. Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime;8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)