A new analytical method for characterising the bonding environment at rough interfaces in high-k gate stacks using electron energy loss spectroscopy
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference36 articles.
1. Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO2 transistors
2. Investigating physical and chemical changes in high-k gate stacks using nanoanalytical electron microscopy
3. Characterization of advanced gate stacks for Si CMOS by electron energy-loss spectroscopy in scanning transmission electron microscopy
4. Scanning transmission electron microscopy of gate stacks with HfO2 dielectrics and TiN electrodes
5. Electron energy-loss spectrum imaging of high-k dielectric stacks
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