Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure-Reference-Cited by-同舟云学术

Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure

Published:2018-01-21 Issue:3 Volume:123 Page:035703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bashir A.¹^ORCID,Gallacher K.²^ORCID,Millar R. W.²,Paul D. J.²^ORCID,Ballabio A.³^ORCID,Frigerio J.³,Isella G.³^ORCID,Kriegner D.⁴⁵^ORCID,Ortolani M.⁶^ORCID,Barthel J.⁷,MacLaren I.¹^ORCID

Affiliation:

1. School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ, United Kingdom

2. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, United Kingdom

3. L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo Territoriale di Como, Via Anzani 42, Como I-22100, Italy

4. Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic

5. Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2, Czech Republic

6. Center for Life NanoScience@Sapienza, Istituto Italiano di Tecnologia, Viale Regina Elena 291, Rome I-00161, Italy

7. Ernst Ruska-Centre (ER-C) for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

Funder

Scottish Universities Physics Alliance

European Commission

Deutsche Forschungsgemeinschaft

Schlumberger Foundation

RCUK | Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5001158

Reference86 articles.

1. Limit to the Bit-Rate Capacity of Electrical Interconnects from the Aspect Ratio of the System Architecture

2. Rationale and challenges for optical interconnects to electronic chips

3. High-performance Ge-on-Si photodetectors

4. Breaking the Energy-Bandwidth Limit of Electrooptic Modulators: Theory and a Device Proposal

5. An ultralow power athermal silicon modulator

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