Characterization of advanced gate stacks for Si CMOS by electron energy-loss spectroscopy in scanning transmission electron microscopy-Reference-Cited by-同舟云学术

Characterization of advanced gate stacks for Si CMOS by electron energy-loss spectroscopy in scanning transmission electron microscopy

Published:2005-05 Issue:2-3 Volume:143 Page:149-158
ISSN:0368-2048
Container-title:Journal of Electron Spectroscopy and Related Phenomena
language:en
Short-container-title:Journal of Electron Spectroscopy and Related Phenomena

Author:

Foran Brendan,Barnett Joel,Lysaght Patrick S.,Agustin Melody P.,Stemmer Susanne

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Radiation,Electronic, Optical and Magnetic Materials

Reference63 articles.

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5. Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal–oxide–semiconductors

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