Scanning transmission electron microscopy of gate stacks with HfO2 dielectrics and TiN electrodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2053362
Reference20 articles.
1. High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics
2. Physical and electrical properties of metal gate electrodes on HfO[sub 2] gate dielectrics
3. On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
4. Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO2 transistors
5. Chemical vapor deposition of HfO2 films on Si(100)
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3. Electron microscopy and electron energy loss spectroscopy of titanium nitride thin films in TiN<sub><i>x</i></sub>/La: HfO<sub>2</sub> (Hf<sub>0.5</sub>Zr<sub>0.5</sub>O)/TiN<sub><i>x</i></sub>/SiO<sub>2</sub>;Известия Российской академии наук. Серия физическая;2023-10-01
4. Electronic excitations in monoclinic hafnia as studied by spatially and momentum-resolved electron energy-loss spectroscopy and ab initio density functional theory calculations;Physical Review Materials;2023-06-07
5. Impact of oxygen content on phase constitution and ferroelectric behavior of hafnium oxide thin films deposited by reactive high-power impulse magnetron sputtering;Acta Materialia;2022-10
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