Electron microscopy and electron energy loss spectroscopy of titanium nitride thin films in TiNx/La: HfO2 (Hf0.5Zr0.5O)/TiNx/SiO2-Reference-Cited by-同舟云学术

Electron microscopy and electron energy loss spectroscopy of titanium nitride thin films in TiNx/La: HfO2 (Hf0.5Zr0.5O)/TiNx/SiO2

Published:2023-10-01 Issue:10 Volume:87 Page:1434-1440
ISSN:0367-6765
Container-title:Известия Российской академии наук. Серия физическая
language:
Short-container-title:Izvestiâ Akademii nauk SSSR. Seriâ fizičeskaâ

Author:

Suvorova E. I.¹,Uvarov O. V.²,Klimenko A. A.³,Chizh K. V.²³

Affiliation:

1. Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics” of the Russian Academy of Sciences

2. Prokhorov General Physics Institute of Russian Academy of Sciences

3. Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences

Abstract

The structure and properties of TiNx electrodes obtained by plasma-enhanced atomic layer deposition in the 20 nm TiNx/10 nm La: HfO2(Hf0.5Zr0.5O)/20 nm TiNx/1 μm SiO2 system have been studied by electron microscopy and electron energy loss spectroscopy. It is shown that the electrode material has a TiNxOy composition, the band gap width varies within 1.7–2.5 eV, the resistivity is 208 μOm cm and the value of the temperature coefficient of resistance (20–100°C) is equal to –31.4 ⋅ 10–6 1/K.

Publisher

The Russian Academy of Sciences

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