Selective area etching of III–V semiconductors using TDMAAs and TDMASb in metalorganic molecular beam epitaxy chamber
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. In-situ dry etching of InP using phosphorus trichloride and regrowth inside a chemical beam epitaxial growth chamber
2. Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE)
3. Growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris‐dimethylaminoarsenic
4. Amino-arsine and -phosphine compounds for the MOVPE of III–V semiconductors
5. Mass Spectrometric Study and Modeling of Decomposition Process of Tris-Dimethylamino-Arsenic on (001) GaAs Surface
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1. Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces;Progress in Crystal Growth and Characterization of Materials;2016-12
2. Interface Between Atomic Layer Deposition Ta2O5 Films and GaAs(100) Surfaces;The Journal of Physical Chemistry C;2012-04-16
3. Growth Process of GaAs Cap Layers on GaSb/GaAs Quantum Dot Surfaces;2007 IEEE 19th International Conference on Indium Phosphide & Related Materials;2007-05
4. Digital Etching of InP by Intermittent Injection of Trisdimethylaminophosphorus in Ultrahigh Vacuum;Journal of The Electrochemical Society;1999-02-01
5. Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh Vacuum;Japanese Journal of Applied Physics;1998-12-15
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