Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine
2. Substituted arsines as As sources in MOMBE
3. Surface chemistry of a new III–V MOCVD reactant: PhAsH2 on GaAs(100)
4. Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by MOMBE
5. Trisdimethylaminoarsine as As source for the LP-MOVPE of GaAs
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1. As Doping in (Hg,Cd)Te: An Alternative Point of View;Journal of Electronic Materials;2008-04-23
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