Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102494
Reference11 articles.
1. Thermochemistry of alkylarsine compounds used as arsenic precursors in metalorganic vapor phase epitaxy
2. Pyrolysis of tertiarybutylphosphine
3. Metalorganic chemical vapor deposition of high‐purity GaAs using tertiarybutylarsine
4. High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine
5. Characterization of InP grown by OMVPE using trimethylindium and tertiarybutylphosphine (TBP) at low V/III ratios and reduced TBP partial pressures
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1. Fundamental aspects of organometallic vapor phase epitaxy;Materials Science and Engineering: B;2001-11
2. Chemical beam epitaxy of AlAs using novel group-V precursors;Journal of Crystal Growth;2000-06
3. Kinetics;Organometallic Vapor-Phase Epitaxy;1999
4. Planar selective area growth of DH laser structures using hydrides, tertiarybutyl and ditertiarybutyl group V precursors in MOMBE;Journal of Crystal Growth;1998-06
5. Growth of InP using TBP and DTBP in metalorganic molecular beam epitaxy;Journal of Crystal Growth;1998-06
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