Digital Etching of InP by Intermittent Injection of Trisdimethylaminophosphorus in Ultrahigh Vacuum-Reference-Cited by-同舟云学术

Digital Etching of InP by Intermittent Injection of Trisdimethylaminophosphorus in Ultrahigh Vacuum

Published:1999-02-01 Issue:2 Volume:146 Page:547-550
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Otsuka Nobuyuki¹,Nishizawa Jun‐ichi¹²,Oyama Yutaka¹²³,Kikuchi Hideyuki¹²,Suto Ken¹²³

Affiliation:

1. Telecommunications Advancement Organization of Japan, Sendai Research Center, Koeji Sendai 980-0868, Japan

2. Semiconductor Research Institute of Semiconductor Research Foundation, Kawauchi Aoba, Sendai 980-0862, Japan

3. Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1391641/pdf

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1. A molecular dynamics investigation of fluorocarbon based layer-by-layer etching of silicon and SiO2;Journal of Applied Physics;2007-02

2. Digital etching of III-N materials using a two-step Ar/KOH technique;Journal of Electronic Materials;2006-04

3. Expanded self-limiting growth condition of InP using alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum;Journal of Crystal Growth;2000-02

4. Self-limiting growth of InP by alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum;Journal of Crystal Growth;1999-09

5. Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-09